Technical Specifications Product type RAM Memory Manufacturer SK Hynix Part number HMCG66MEBSA092N BA Condition New Capacity 8GB Kit 1 x 8 GB Standard / Generation DDR5 Rank 1R x 16 Type of memory SO-DIMM ECC Support No ECC Registered not (nonREG) Module speed PC5-4800B Frequency 4800MHz Cycle Latency 40 Voltage (V) 1.1 Pin assignment 262 pin DDR5 ushers in data-centric innovation DDR5 meets the demands of industries experiencing an enormous burst in data. A new level of speed, improved capacity, and bolstered reliability are packed into DDR5 to enhance overall system performance. SK Hynix's memory technology propels the next era of planet-friendly innovation with power-saving DDR5. Faster processing and file manipulation DDR5 Laptop Memory can empower your computer to transfer data 50% faster than DDR4 at launch, resulting in shorter load times, file transfers, downloads, lag time and improved refresh rates. Due to higher bus efficiency, DDR5 technology is not just faster than the previous generation, it’s better. Responsive multitasking on the go DDR5 offers 50% faster speeds than DDR4 at launch, empowering laptop users with extreme performance right out of the box. Even more impressive, DDR5 Laptop Memory is optimized for enhanced performance and multitasking, not just during testing, but in real-world conditions. Opening more browser tabs and switching between apps now feels more responsive than ever. Optimized power efficiency For improved efficiency and stability, DDR5 introduces on-module voltage regulation with a power management integrated circuit (PMIC), which was on the motherboard with older memory technologies. This results in improved signaling and cleaner power regulation for the modules (SODIMMs). Moreover, DDR5’s on-module operating voltage is only 1.1V compared to DDR4’s 1.2V.